Correlation of p-doping in CVD Graphene with Substrate Surface Charges

Correlations between the level of p-doping exhibited in large area chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual charges created by a variety of surface treatments to the silicon dioxide (SiO(2)) substrates prior to CVD graphene transfer are measured. Beginning with graphene on untreated thermal oxidised silicon, a minimum conductivity (σ(min)) occurring at gate voltage V(g) = 15 V (Dirac Point) is measured. It was found that more aggressive treatments (O(2) plasma and UV Ozone treatments) further increase the gate voltage of the Dirac point up to 65 V, corresponding to a significant increase of the level of p-doping displayed in the graphene. An electrowetting model describing the measured relationship between the contact angle (θ) of a water droplet applied to the treated substrate/graphene surface and an effective gate voltage from a surface charge density is proposed to describe biasing of V(g) at σ(min) and was found to fit the measurements with multiplication of a correction factor, allowing effective non-destructive approximation of substrate added charge carrier density using contact angle measurements

Non-contact method for measurement of the microwave conductivity of graphene

We report a non-contact method for conductivity and sheet resistance measurements of graphene samples using a high Q microwave dielectric resonator perturbation technique, with the aim of fast and accurate measurement of microwave conductivity and sheet resistance of monolayer and few layers graphene samples. The dynamic range of the microwave conductivity measurements makes this technique sensitive to a wide variety of imperfections and impurities and can provide a rapid non-contacting characterisation method. Typically the graphene samples are supported on a low-loss dielectric substrate, such as quartz, sapphire or SiC. This substrate is suspended in the near-field region of a small high Q sapphire puck microwave resonator. The presence of the graphene perturbs both centre frequency and Q value of the microwave resonator. The measured data may be interpreted in terms of the real and imaginary components of the permittivity, and by calculation, the conductivity and sheet resistance of the graphene. The method has great sensitivity and dynamic range. Results are reported for graphene samples grown by three different methods: reduced graphene oxide (GO), chemical vapour deposition (CVD) and graphene grown epitaxially on SiC. The latter method produces much higher conductivity values than the others.Comment: 8 pages, 2 figures and 2 table

Chalcogenide Glass-on-Graphene Photonics

Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absorption, and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. In this paper, we present a new route for 2-D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material which can be directly deposited and patterned on a wide variety of 2-D materials and can simultaneously function as the light guiding medium, a gate dielectric, and a passivation layer for 2-D materials. Besides claiming improved fabrication yield and throughput compared to the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2-D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared (mid-IR) waveguide-integrated photodetectors and modulators